I am an experimental physicist. My research focusses on electronic transport in mesoscopic devices. These are micron-scale structures defined on a semiconductor platform which, in my case, are GaAs/AlGaAs heterostructure or bilayer graphene. In my pursuit, I have become well versed with fabrication, measurements, data acquisition and analysis. I design and fabricate most of these devices myself, starting from base materials to several processes such as electron beam lithography, etching recipes, and metallization, all the way to device packaging. One of my distinguished experience in fabrication is in the assembly of heterostructures of 2D crystals, such as graphene, boron nitride and transition metal dichalcogenides.
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A two-dimensional electron system (2DES) formed in a GaAs/AlGaAs heterostructure offers an avenue to build a variety of mesoscopic devices, much of which is achieved by the capability to construct complex potential landscapes using surface gates. Trapping charge carriers in low densities on them gives the prospects for a broad range of phenomena to emerge. This was the central idea behind my studies in these systems.
Bilayer graphene (BLG), made of two layers of graphene sheets in Bernal stacking, is fundamentally different from an individual graphene layer. The most striking property is that a tunable band gap can be induced in BLG by applying an electric field perpendicular to its plane. As a result, BLG can be electrically driven from a metallic state, with high carrier mobility, to a strongly insulating state, thus being suitable for a diverse range of novel device applications. However, experiments revealed that a significant density of states exist inside the band gap, which leads to new transport mechanisms. My goal has been to understand its true nature by examining noise in the form of flicker noise and mesoscopic conductance fluctuations when it is strongly gapped.