Conference Publications:

1.      J.Sturm, H.Manoharan, V.Venkataraman, P.Schwartz, and P.Garone, ``Control of individual layer growth temperatures by rapid temperature switching in Si/SiGe multilayer structures grown by rapid thermal chemical vapor deposition,'' Proc. Inter. Conf. on Electronic Materials, 457, 1990.

2.      J.C. Sturm, P.M. Garone, E.J. Prinz, P.V. Schwartz and V. Venkataraman, ``Interface abruptness in epitaxial silicon and silicon-germanium structures grown by rapid thermal chemical vapor deposition,'' Electrochemical Society International CVD Symposium, Seattle, October 1990.

3.      P.M. Garone, V. Venkataraman and J.C. Sturm, ``Carrier confinement in MOS-gated Si/SiGe/Si heterostructures'', International Electron Devices Meeting, San Francisco, December 1990.

4.      J.C. Sturm,  P.M. Garone and V.Venkataraman,  ``High hole mobility p-channel MOSFETs using MOS-gated Si/SiGe heterostructures,''  Int. Conf. on Solid State Devices and Materials, Yokohama, August 1991.

5.      V. Venkataraman and J.C. Sturm, ``Single and symmetric double two-dimensional hole gases at Si/SiGe heterojunctions grown by rapid thermal chemical vapor deposition'', MRS Spring Meeting, Anaheim, April 1991.

6.      P.M. Garone, V. Venkataraman, and J.C. Sturm, ``Hole mobility enhancement in MOS-gated Si/SiGe/Si heterostructure inversion layers'', Electronic Materials Conf., Boulder, June 1991.

7.      V. Venkataraman, C.W. Liu, and J.C. Sturm, ``High mobility electron gases with very low sheet resistivities and MODFETs fabricated in SiGe/Si'', AVS Topical Symposium on Silicon-based Heterostructures, Chicago, Nov 1992.

8.      V. Venkataraman, C.W. Liu and J.C. Sturm, ``Effect of alloy scattering on low temperature mobilities of two-dimensional holes and electrons in Si/SiGe heterostructures'', Electronic Materials Conf, Santa Barbara, June 1993.

9.      Z.Matutinovic-Krstelj, E.J. Prinz, V. Venkataraman, and J.C. Sturm, ``A comprehensive study of lateral and vertical current transport in Si/SiGe/Si HBTs'', International Electron Devices Meeting, Washington D.C., December 1993.

10.  M. Vijayaraghavan and V. Venkataraman, `` Effect of hydrogenation on mobility and density of 2DEG in Si/SiGe modulation doped structures'', International Workshop on Physics of Semiconductor Devices, New Delhi, Dec 1995.

11.  M.Vijayaraghavan, V.Venkataraman, C.Liu, and J.Sturm, ``Hydrogen passivation of Si/SiGe modulation doped heterostructures,'' MRS Spring Meeting, San Francisco, April 1996.

12.  C. W. Liu and V. Venkataraman, ``Electron cyclotron resonance of electrons in strained Si and Si0.94Ge0.06 channels on relaxed Si0.62Ge0.38 buffers grown by RTCVD'', MRS Spring Meeting, San Francisco, April 1996.

13.  S.Madhavi, V.Venkataraman, C.Liu, and J.Sturm, ``High field drift velocity in Si/SiGe modulation doped structures as measured by magnetoresistance,'' IEEE Device Research Conf.,  Santa Barbara, June 1996.

14.  M. Vijayaraghavan, V. Venkataraman and Y. Xie, ``Ultrasensitive photoresponse in modulation doped Si/GeSi/Ge/GeSi heterostructures'', International Conference on Silicon-based Heterostructures, ,Italy, September 1997.

15.  M. Vijayaraghavan, S. Madhavi and V. Venkataraman, ``Persistent photoconductivity in Si/SiGe heterostructures'', International Workshop on Physics of Semiconductor Devices,  New Delhi, December 1997.

16.  S. Madhavi and V. Venkataraman, ``Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures'', International Joint Conference on Silicon Epitaxy and Heterostructures, Miyagi, Japan, September 1999. (Best student paper award)

17.  B. Bansal and V. Venkataraman, ``Study of magnetotransport in Si/SiGe heterostructures using a low cost 7 Tesla pulsed magnet'', International Workshop on Physics of Semiconductor Devices,  New Delhi, December 1999.

18.  S. Madhavi and V. Venkataraman, ``Mobility limiting mechanisms in modulation doped Si/SiGe and Ge/SiGe heterostructures'', International Workshop on Physics of Semiconductor Devices, New Delhi, December 1999.

19.  S. Madhavi and V. Venkataraman, ``Study of lattice heating effects on hot carrier mobility in modulation doped Si/SiGe and Ge/SiGe heterostructures'', Indo-French Workshop on Quantum Semiconductor Structures: Modern Developments, Calcutta, December 1999.

20.  S. Mukerjee and V. Venkataraman, ``Ellipsometric Investigation of Strain Reduction in SiGeC layers compared to SiGe layers grown on Silicon'', International Conference on Communications, Computers and Devices (ICCCD 2000), IIT Kharagpur, December 2000.

21.  S. Mukerjee, S. Madhavi and V. Venkataraman, ``Novel Ellipsometry Technique to Measure Strain in Si(1-x)Ge(x) and Si(1-x-y)Ge(x)C(y) Thin Films'', First International Workshop on New Group IV Semiconductors (Si-Ge-C), Sendai, Japan, January 2001.

22.  Debjani Pal and V. Venkataraman, ``Design and Fabrication of a microchip thermocycler based on induction heating'', International MEMS Workshop (iMEMS 2001), Singapore, July 2001.

23.  Debjani Pal and V. Venkataraman, ``Microfabricated Devices For Bio-analysis'', International Workshop on Physics of Semiconductor Devices, New Delhi, December 2001.

24.   V. K. Dixit, Bhavtosh Bansal, V.Venkataraman, and H. L. Bhat, ``High Mobility and 9.5 Micron Cut-Off Wavelength InAsSb Films Grown on Semi-Insulating GaAs by Liquid Phase Epitaxy'', Electronic Materials Conference, Santa Barbara, June 2002.

25.  Anil Mane, Arpan Chakraborty, M. P. Singh, M. S. Dharmaprakash, V. Venkataraman, and S. A. Shivashankar, ``Atomic Layer Deposition of ZrO2 Thin Films'', Electronic Materials Conference, Santa Barbara, June 2002.

26.  Arpan Chakraborty, Anil U. Mane, S. A. Shivashankar and V. Venkataraman, ``Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition'',  MRS Fall Meeting, Boston, December 2002.

27.  Bhavtosh Bansal, V. K. Dixit, V. Venkataraman and H. L. Bhat, ``Transport, Optical and Magneto-transport properties of Hetero-epitaxial InAsxSb1-x/GaAs and Bulk InAsxSb1-x (x < 0.06) Crystals: Experiment and Theoretical Analysis'',  11th International Conference on Narrow Gap Semiconductors, Buffalo, New York, U.S.A., June 2003.

28.  Bhavtosh Bansal and V. Venkataraman, ``Magnetic Field Induced De-population in Intrinsic InSb: A Revisit'',  7th International Symposium of Research in High Magnetic Fields, Toulouse, France, July 2003.

29.  Arjun Joshua and V. Venkataraman, ``Photoreflectance in strained Ge/Si heterostructures'', International Workshop on Physics of Semiconductor Devices, Chennai, December 2003. (Best poster award)

30.  Murthy O.V.S.N and V. Venkataraman, ``Variable Magnetic Field Hall and resistivity Measurements on p-type HgCdTe upto 15 Tesla'', International Workshop on Physics of Semiconductor Devices, Chennai, December 2003.

31.  Bhavtosh Bansal, V. K. Dixit, V Venkataraman, H. L. Bhat, ``Alloying and Heteroepitaxy Induced Disorder Effects on the Absorption Edge and Transport in Mismatched InAsSb /GaAs'', 27th International Conference on Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, July 2004. (Accepted for poster but did not present)

32.  Bhavtosh Bansal, V. Venkataraman , ``Transport Effects of Charged Dislocation Scattering: A Reexamination'', 27th International Conference on Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, July 2004. (Accepted for poster but did not present)

33.  Sudip Mondal and V. Venkataraman, ``In-situ monitoring of polymerase kinetics by fluorescence during PCR", International Topical Conference On Optical Probes Of Conjugated Polymers and Biosystems (Op2005), , Bangalore, India, January 2005.

34.  Murthy O.V.S.N., Bhavtosh Bansal , V. Venkataraman and R.K. Sharma, ``Study of multicarrier transport in bulk HgCdTe using 15T pulsed magnetic fields”, International Conference on Narrow Gap Semiconductors, Toulouse, France, July 2005.

35.  Murthy O.V.S.N and V. Venkataraman, “Construction of Low Temperature and High Pulsed Magnetic Field System for Magnetotransport Characterization”, 13th International Workshop on the Physics of Semiconductor Devices , New Delhi, India, December 2005.

36.  Arjun Joshua and V. Venkataraman, “Effect of photo-excited carriers on inter-band absorption in silicon”, International Conference on Electronic and Photonic Materials, Devices and Systems – 2006, Kolkata, India, January 2006.

37.  Sudip Mondal, Debjani Pal and V. Venkataraman, “Optimization of PCR using fast in-situ fluorescence in microchip”, 2006 NSTI Nanotechnology Conference and Trade Show, Boston, USA, May 2006 (accepted for poster, but did not present).

38.  Sudip Mondal and V. Venkataraman, “Novel fluorescence detection technique for non-contact temperature sensing in microchip PCR”, MicroTAS2006: 10th International Conference on Miniaturized Systems for Chemistry and Life Sciences, Tokyo, Japan,  November 5-9, 2006.

39.   Murthy O V S N, G A Kulkarni, S Sitharaman, and V Venkataraman, “Magnetotransport studies in hydrogenated and annealed Mercury Cadmium Telluride thin films”, 14th Intl. Workshop on Physics of Semiconductor Devices (IWPSD), Mumbai, India, December 17-20, 2007

40.   Arjun Joshua and V. Venkataraman, “Simplified theory of optical nonlinearities in spin-polarized bulk GaAs”, 14th Intl. Workshop on Physics of Semiconductor Devices (IWPSD), Mumbai, India, December 17-20, 2007

41.  Nihal Arju and V. Venkataraman, “Investigation on Growth of Bismuth Films by Thermal Vapour Deposition”, 52nd DAE Solid State Physics Symposium, Mysore, India, December 27-31, 2007

42.  Arjun Joshua and  V. Venkataraman, “Quasiequilibrium nonlinearities in Faraday and Kerr rotation from spin-polarized carriers in GaAs'”, 29th International Conference on the Physics of Semiconductors,  Rio de Janeiro, Brazil, 27th July - 1st August 2008.

43.  Arjun Joshua and V. Venkataraman, “Enhancement of sensitivity of detection of Kerr rotation by time averaging”, 5th International Conference on Physics and Applications of Spin related Phenomena in Semi-conductors, Foz do Iguacu , Brazil, 3rd--6th August 2008.

44.  Arjun Joshua and V. Venkataraman, “Quasiequilibrium nonlinearities in Faraday and Kerr rotation from spin-polarized carriers in GaAs”, 5th International Conference on Physics and Applications of Spin related Phenomena in Semi-conductors, Foz do Iguacu , Brazil, 3rd--6th August 2008.

45.  O.V.S.N. Murthy and V. Venkataraman, “Hole mobility in HgCdTe”, 29th International Conference on the Physics of Semiconductors,  Rio de Janeiro, Brazil, 27th July - 1st Aug 2008.

46.  O.V.S.N. Murthy and V. Venkataraman, “Hot carrier transport in HgCdTe epilayers”, 29th International Conference on the Physics of Semiconductors,  Rio de Janeiro, Brazil, 27th July -- 1st August 2008.

47.  O.V.S.N. Murthy and V. Venkataraman, “Closed cycle refrigerator based pulsed magnet”, 18th High Magnetic Fields in Semiconductors, Sao Pedro, Brazil, 3rd--8th August 2008.

48.  O.V.S.N. Murthy and V. Venkataraman, “Multicarrier analysis of magnetotransport data at low and high electric fields”, 35th International Symposium on Compound Semiconductors (ISCS2008), Freiburg, Germany, September 21--24, 2008.

49.  Sudip Mondal and V. Venkataraman, “How does polymerase kinetics depend on microchip PCR cycling? “, ICTP Conference: From DNA-Inspired Physics to Physics-Inspired Biology, 1--5 June 2009, Trieste, Italy (Won 1st Best Poster Prize award).

50.  O. V. S. N. Murthy, V. Venkataraman and R. K. Sharma, “Multicarrier Analysis of Free Carrier Absorption in Mercury Cadmium Telluride”, International Conference on II-VI Compounds, Aug 23--28, 2009, St Petersburg, Russia.

51.  Chinkhanlun Guite and V. Venkataraman, “Electrical detection of spin polarized electrons in semiconductors using a radio-frequency pick-up coil”, 15th International Workshop on Physics of Semiconductor Devices (IWPSD), December 15--19, 2009, Delhi.

 

 

General Articles:

1.      V.Venkataraman, ``Si, Si-Ge and the new heterostructure world,'' Current Science, 67, 855, 1994.

2.      V. Venkataraman, ``Physics Nobel Prize 2000 goes to Semiconductor Pioneers'', Resonance, Page 79, January 2001.

Media Reports:

1.      ``DNA diagnostics in record time'', Deccan Herald , Science and Technology Supplement, February 7th, 2005.

2.      “A Nano in Diagnostics”,  Times of India, Times Business Section, January 28th, 2008.

 

Review Articles:

 

1. Sudip Mondal and V. Venkataraman, “Miniaturized devices for DNA amplification and fluorescence based detection”, Journal of the Indian Institute of Science, 87:3, 309 (2007)


 

Journal Publicatons:

1.      V.Venkataraman, P.Schwartz, and J.Sturm, ``Symmetric Si/Si1-xGex two-dimensional hole gases grown by rapid thermal chemical vapor deposition,'' Appl. Phys. Lett., 59, 2871, (1991).

2.      P.Garone, V.Venkataraman, and J.Sturm, ``Hole confinement in MOS-Gated GexSi1-x/Si heterostructures,'' IEEE Electron Device Lett., 12, 230, (1991).

3.      P.Garone, V.Venkataraman, and J.Sturm, ``Hole mobility enhancement in MOS-Gated GexSi1-x/Si heterostructure inversion layers,'' IEEE Electron Device Lett., 13, 56, (1992).

4.      V.Venkataraman, P.Schwartz, and J.Sturm, ``Alloy scattering limited transport of two dimensional carriers in strained Si1-xGex quantum wells,'' Appl. Phys. Lett., 63, 2795, (1993).

5.      V.Venkataraman, C.Liu, and J.Sturm, ``High mobility electron gases and modulation-doped field effect transistors fabricated in Si/SiGe by rapid thermal chemical vapor deposition,'' J.Vac. Sci. Technol. B, 11, 1176, (1993).

6.      Z.M-Krstelj, V.Venkataraman, E.Prinz, J.Sturm, and C.Magee, ``Base resistance and effective bandgap reduction in n-p-n Si/SiGe/Si HBTs with heavy base doping,'' IEEE Trans. Electron Devices, 43, 457, (1996).

7.      S.Balasubramanian and V.Venkataraman, ``Valley splitting in Si/SiGe heterostructures,'' Solid State Communications, 100, 525, (1996).

8.      C.Liu and V.Venkataraman, ``Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition,'' Materials Chemistry and Physics, 1904, (1996).

1.      A.Majumdar, S.Balasubramanian, V.Venkataraman, and N.Balasubramanian, ``Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal,'' J.Appl. Phys., 82(1), 192, (1997).

2.      M.Raghavan and V.Venkataraman, ``Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures,'' Semicond. Sci. Technol., 13, 1317, (1998).

3.      C.Chang, S.Shukla, W.Pan, V.Venkataraman, J.Sturm, and M.Shayegan, ``Effective mass measurement in two dimensional hole gas in strained Si_{1-x-y}Ge_xC_y/Si(100) modulation doped heterostructures,'' Thin Solid Films, 321, 51, (1998).

4.      S. Madhavi and V. Venkataraman, ``Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures'', Thin Solid Films, 369, 335, (2000).

5.      S. Madhavi, V. Venkataraman, J. C. Sturm and Y.H. Xie, ``Low and high field transport properties of modulation doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells'', Phys. Rev. B. 61, 16807, (2000).

6.      M.N. Vijayaraghavan, V. Venkataraman and Y.H. Xie, ``Ultra-sensitive photoresponse and persistent photoconductivity in modulation doped Ge/SiGe and Si/SiGe heterostructures", Semicond. Sci. Technol., 15, 957, (2000).

7.      Subroto Mukerjee and V. Venkataraman, ``Characterization of strain in Si(1-x)Ge(x) films using multiple angle of incidence ellipsometry'', Appl. Phys. Lett., 77 (22), 3529 (2000).

8.      S. Madhavi, V. Venkataraman and Y.H. Xie, ``High room-temperature hole mobility in Ge_{0.7} Si_{0.3}/Ge/Ge_{0.7} Si_{0.3} modulation-doped heterostructures'', J. Appl. Phys., 89(4), 2497, (2001).

9.      Subroto Mukerjee and V. Venkataraman, ``Ellipsometric investigation of strain reduction in Si_{1-x-y}Ge_{x}C_{y} layers compared to Si_{1-x}Ge_{x} layers on silicon '', Solid-State Elect., 45, 1875, (2001).

10.    V. K. Dixit, Bhavtosh Bansal, V. Venkataraman, H. L. Bhat, G. N. Subbanna, K. S. Chandrasekharan, and B. M. Arora, ``High-mobility InSb epitaxial films grown on a GaAs (001) substrate using liquid-phase epitaxy'', Appl. Phys. Lett., 80, 2102, (2002).

11.   V. K. Dixit,  Bhavtosh Bansal, V. Venkataraman, H. L. Bhat, and G. N. Subbanna, ``Structural, optical, and electrical properties of bulk single crystals of InAs_{x}Sb_{1 - x} grown by rotatory Bridgman method'', Appl. Phys. Lett., 81, 1630, (2002).

12.  Debjani Pal and V. Venkataraman, `` A portable battery-operated chip thermocycler based on induction heating'', Sensors and Actuators A,  102, 151, (2002).

13.   K. Sardar, A.R. Raju, Bhavtosh Bansal, V. Venkataraman, C.N.R. Rao, ``Magnetic, optical and transport properties of GaMnN films'', Solid State Communications, 125, 55, (2003).

14.  Bhavtosh Bansal, V. K. Dixit, V. Venkataraman and H. L. Bhat, `` Temperature dependence of the energy gap and free carrier absorption in bulk InAs_{0.05}Sb_{0.95} single crystals'', Appl. Phys. Lett.,82, 4720, (2003).

15.  Debjani Pal, V. Venkataraman, K. Nagamohan, H. SharatChandra and Vasant Natarajan, ``A power-efficient thermocycler based on induction heating for DNA amplification by polymerase chain reaction", Rev. Sci. Instr., 75, 2880, (2004).

16.  V. K. Dixit, Bhavtosh Bansal, V. Venkataraman, H. L. Bhat, K. S. Chandrasekharan, and B.M. Arora, `` Studies on high resolution x-ray diffraction, optical and transport properties of InAs[sub x]Sb[sub 1 - x]/GaAs (x less than 0.06) heterostructure grown using liquid phase epitaxy", J. Appl. Phys., 96 , 4989, (2004).

17.  Bhavtosh Bansal, V. K. Dixit, V. Venkataraman and H.L.Bhat, ``Transport, optical and magneto-transport properties of hetero-epitaxial InAsxSb1-x(x£0.06) and bulk InAsxSb1-x (x£0.05) crystals: experiment and theoretical analysis”, Physica E, 20, 272 (2004).

18.    K. S. Nagapriya, A. K. Raychaudhuri, Bhavtosh Bansal, V. Venkataraman, Sachin Parashar and C. N. R. Rao, ``Collapse of the charge-ordering state at high magnetic fields in the rare-earth manganite Pr0.63Ca0.37MnO3'', Phys. Rev.B, 71, 024406, (2005).

19.  Arjun Joshua and V Venkataraman, ``Effect of well width on the electro-optical properties of a quantum well'', Semicond. Sci. Technol., 20, 490–495, (2005).

20.  Bhavtosh Bansal and V Venkataraman, ``Magnetic field induced band depopulation in intrinsic InSb: a revisit", J. Phys.: Condens. Matter 17, 7053, (2005).

21.  Joji Joykutty, Vaibhav Mathur, V. Venkataraman, and Vasant Natarajan,``Direct Measurement of the Oscillation Frequency in an Optical-Tweezers Trap by Parametric Excitation”, Phys. Rev. Lett. 95, 193902 (2005).

22.  Sudip Mondal and V. Venkataraman, “In situ monitoring of polymerase extension rate and adaptive feedback control of PCR by using fluorescence measurements”, J. Biochem. Biophys. Methods, 65, 97–105, (2005)

23.  Sudip Mondal, Debjani Paul and V. Venkataraman, “Dynamic optimization of on-chip polymerase chain reaction by monitoring intracycle fluorescence using fast synchronous detection”, Appl. Phys. Lett., 90, 013902 (2007).

24.  Bhavtosh Bansal, V. K. Dixit, V. Venkataraman, and H. L. Bhat, “Alloying induced degradation of the absorption edge of InAsxSb1−x ” ,  Appl. Phys. Lett., 90, 101905 (2007).

25.  Sudip Mondal and V. Venkataraman, “Novel fluorescence detection technique for non-contact temperature sensing in microchip PCR”, J. Biochem. Biophys. Methods, 70, 773, (2007).

26.   O.V.S.N. Murthy and V. Venkataraman, “Construction and calibration of a 12  T pulsed magnet integrated with a 4  K closed-cycle refrigerator”, Rev. Sci. Inst., 78, 113905 (2007).

27.  Arjun Joshua and V. Venkataraman, “Quasiequilibrium optical nonlinearities from spin-polarized carriers in GaAs”, Phys. Rev. B, 77, 085202 (2008).

28.  Arjun Joshua and V. Venkataraman, “Enhanced sensitivity in detection of Kerr rotation by double modulation and time averaging based on Allan variance'”, Rev. Sci. Inst., 80, 023908 (2009).

29.  Arjun Joshua and V. Venkataraman, “Simplified theory of optical nonlinearities in spin-polarized semiconductors”, J. Phys.: Condens. Matter, 21, 445804 (2009).

30.  O. V. S. N. Murthy, V. Venkataraman, R. K. Sharma, I. Vurgaftman, and J. R. Meyer, “Multicarrier conduction and Boltzmann transport analysis of heavy hole mobility in HgCdTe near room temperature”, J. Appl. Phys., 106, 113708 (2009).